Efficient Power Conversion (EPC) introduces the latest ePower™ Stage IC that integrates a complete GaN half-bridge power stage capable of up to 35 A at 1 MHz operation offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drives, and class-d audio amplifiers.

EPC23102: 35 A GaN ePower™ Stage IC Boosts Power Density and Simplifies Design (Graphic: Business Wire)

EPC23102: 35 A GaN ePower™ Stage IC Boosts Power Density and Simplifies Design (Graphic: Business Wire)

EL SEGUNDO, Calif.--(BUSINESS WIRE )--EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100 V, delivering up to 35 A load current, while capable of switching speeds greater than 1 MHz.

When operated in a 48 V to 12 V buck converter, the EPC23102 delivers greater than 96% peak efficiency at 1 MHz switching frequency and around 8 – 17 A of continuous load current with a rated current of 35 A.

“The ePower family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology,” said Alex Lidow, CEO and co-founder of EPC. “Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency. Designers can use these devices to make lighter weight and more precise BLDC motor drives, higher efficiency 48 V input DC-DC converters, higher fidelity class-d audio systems, and other industrial and consumer applications.”

The EPC90147 development board is a 100 V maximum device voltage, 35 A maximum output current, half bridge featuring the EPC23102 ePower Stage IC. The purpose of this board is to simplify the evaluation process of the EPC23102. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.

The EPC23102 priced at $5.40 each in 1 Ku volumes.

The EPC90147 development board is price at $200.00 each.

All devices and boards are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc

Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found at: https://epc-co.com/epc/DesignSupport/GaNPowerBench/CrossReferenceSearch.aspx

EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.

Visit our web site: www.epc-co.com

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Efficient Power Conversion: Renee Yawger tel: 908.619.9678 email: renee.yawger@epc-co.com

35 A GaN ePower™ Stage IC Boosts Power Density and Simplifies Design

Efficient Power Conversion: Renee Yawger tel: 908.619.9678 email: renee.yawger@epc-co.com